TY - JOUR
AU - Chaldyshev, V.
AB - The model pseudopotential method is used to calculate the band structure of the hexagonal semiconductors GaN and InN. A comparison is carried out of the features of the reflection spectrum and the characteristic inelastic electron-scattering loss spectrum with the interband transitions at points and lines of high symmetry. By using one and the same interpretation, satisfactory agreement is obtained with experiment.
TI - Calculation of the band structure of GaN and InN using the pseudopotential method
JF - Russian Physics Journal
DO - 10.1007/BF00893005
DA - 2004-12-13
UR - https://www.deepdyve.com/lp/springer-journals/calculation-of-the-band-structure-of-gan-and-inn-using-the-a7A0cAZWHW
SP - 311
EP - 314
VL - 29
IS - 4
DP - DeepDyve
ER -