TY - JOUR
AU - 
AB - Several aspects of the direct modulation characteristics of semiconductor lasers are discussed, including a brief review of some basic theory and a description of a computer-controlled measurement technique. Methods of extending the modulation bandwidth by changing external and internal parameters are also discussed. Proton-isolated tilted-facet and Zn-diffused window and continuous-stripe lasers are used as examples of devices which allow the modulation bandwidth to be controlled by varying parameters such as the photon lifetime, the spontaneous emission factor, and other aspects of the cavity 0. Measurements demonstrating modulation bandwidths of 6 to 7 GHz are also presented.
TI - Modulation Characteristics Of Semiconductor Laser Devices
JF - Optical Engineering
DO - 10.1117/12.7972865
DA - 1982-02-01
UR - https://www.deepdyve.com/lp/spie/modulation-characteristics-of-semiconductor-laser-devices-Z9yBgGQ3Ii
SP - 210191
EP - 210191-
VL - 21
IS - 1
DP - DeepDyve
ER -