TY - JOUR
AU1 - Liang, W.
AU2 - Kim, K. H.
AB - Field-induced electron transport in an In x Ga 1-x N ( x ≅0.4) sample grown on GaN has been studied by subpicosecond Raman spectroscopy. Non-equilibrium electron distribution and electron drift velocity due to the presence of piezoelectric and spontaneous fields in the In x Ga 1-x N layer have been directly measured. The experimental results are compared with ensemble Monte Carlo calculations and reasonable agreements are obtained.
TI - Subpicosecond Raman studies of nonequilibrium electron transport in an In 0.4 Ga 0.6 N epilayer grown on GaN
JF - Proceedings of SPIE
DO - 10.1117/12.528322
DA - 2004-06-16
UR - https://www.deepdyve.com/lp/spie/subpicosecond-raman-studies-of-nonequilibrium-electron-transport-in-an-YNPcOzrHIv
SP - 404
EP - 411
VL - 5352
IS - 1
DP - DeepDyve
ER -