TY - JOUR
AU - Jackson, Thomas
AB - We report high-quality ZnO thin films deposited at low temperature (200°C) by pulsed plasma-enhanced chemical vapor deposition (pulsed PECVD). Process byproducts are purged by weak oxidants N2O or CO2 to minimize parasitic CVD deposition, resulting in high-refractive-index thin films. Pulsed-PECVD-deposited ZnO thin-film transistors were fabricated on plasma-enhanced atomic layer deposition (PEALD) Al2O3 dielectric and have a field-effect mobility of 15 cm2/V s, subthreshold slope of 370 mV/dec, threshold voltage of 6.6 V, and current on/off ratio of 108. Thin-film transistors (TFTs) on thermal SiO2 dielectric have a field-effect mobility of 7.5 cm2/V s and threshold voltage of 14 V. For these devices, performance may be limited by the interface between the ZnO and the dielectric.
TI - Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors
JF - Journal of Electronic Materials
DO - 10.1007/s11664-009-0995-9
DA - 2009-11-18
UR - https://www.deepdyve.com/lp/springer-journals/low-temperature-pulsed-pecvd-zno-thin-film-transistors-XcxaeRI0LK
SP - 554
EP - 558
VL - 39
IS - 5
DP - DeepDyve
ER -