TY - JOUR
AU - Ono, Yukinori
AB - Conductance of thin (18 nm) silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistor is investigated from the viewpoint of metal insulator transition (MIT). Conductance characteristics taken in the parameter space defined by the front- and back-gate voltages in a temperature range on the order of 10 K reveal that the critical conductance GC, separating the metallic and insulating states, varies with the gate voltages. In particular, it is found that GC of the double (front and back) channel mode is not a simple sum of GC for the two single (front or back) channel modes, but becomes lower than the sum. This is a unique feature of the MIT in thin SOIs, and strongly suggests that modulation of the electron wavefunction due to the vertical confinement affects the MIT properties in thin SOIs.
TI - Critical conductance of two-dimensional electron gas in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
JF - Applied Physics Express
DO - 10.35848/1882-0786/ac25c4
DA - 2021-10-01
UR - https://www.deepdyve.com/lp/iop-publishing/critical-conductance-of-two-dimensional-electron-gas-in-silicon-on-XIB99Rb1uT
VL - 14
IS - 10
DP - DeepDyve
ER -