TY - JOUR
AU - Zhou, Xi-feng
AB - This paper presents a less-occupied and ultra-low noise LDO structure. This structure can achieve ultra-low noise performance without large filter capacitor by incorporating a capacitance amplifying circuit in the structure of LDO with pre-regulation. A large amount of chip area will be saved in this structure. A novel LDO in proposed structure is realized under SMIC 0.18 μm process. The experiment results show that proposed LDO structure can achieve a total output noise of 25.5 μV between 10 Hz and 1 kHz and 56.4 μV between 1 kHz and 1 MHz with a filter capacitor of 5pF. PSR is −71.6 dB under low frequency until 49 kHz and at least −65.7 dB under entire frequency range.
TI - Less occupied and ultra-low noise LDO design
JF - Analog Integrated Circuits and Signal Processing
DO - 10.1007/s10470-014-0400-3
DA - 2014-09-07
UR - https://www.deepdyve.com/lp/springer-journals/less-occupied-and-ultra-low-noise-ldo-design-WxuL5RsV5T
SP - 453
EP - 459
VL - 81
IS - 2
DP - DeepDyve
ER -