TY - JOUR
AU - 
AB - Regular Paper J. Korean Inst. Electr. Electron. Mater. Eng. Vol. 29, No. 11, pp. 676-680 November 2016 DOI: http://dx.doi.org/10.4313/JKEM.2016.29.11.676 ISSN 1226-7945 (Print), 2288-3258 (Online) 저전압 감지회로에 관한 연구 김필중 조선이공대학교 전자과 Phil-Jung Kim Department of Electronics, Chosun College of Science & Technology, Gwangju 61453, Korea (Received September 12, 2016; Revised September 25, 2016; Accepted October 2, 2016) Abstract: This paper describes a low voltage detection circuit used in the semiconductor chips. The circuit was composed of a detection part of the CMOS structure as three stages and two inverters. The output of the low voltage detection circuit become to ‘high’ from ‘low’, when the power supply voltage falls below 80%. When the power supply voltage is 5 V, it was detected at 4 V point. The proposed low voltage detection circuit can be easily applied only by changing the resister and the capacitor without structural change in a wide range of power supply voltage. Keywords: Low voltgae, Detection circuit, Supply voltgae 1. 서 론 작을 위해서는 전원전압의 2∼4배 이상의 고전압(프로 그램 시에는 9∼12 V, 소거 동작 시에는 해당 역전압) 반도체 공정기술 및 설계기술의 발달로 다양한 용도 이 필요하다 [1]. 만일 전원전압이 1 V 이상 낮아지고 의 IC 칩이 제조되고 
TI - A Study on the Low Voltage Detection Circuit
JF - Journal of the Korean Institute of Electrical and Electronic Material Engineers
DO - 10.4313/jkem.2016.29.11.676
DA - 2016-11-01
UR - https://www.deepdyve.com/lp/unpaywall/a-study-on-the-low-voltage-detection-circuit-WhNdFiD0IE
DP - DeepDyve
ER -