TY - JOUR
AU - Hashizume, Tamotsu
AB - We fabricated a multi-mesa-channel (MMC) structure by forming a periodic trench just under a gate electrode to improve the uniformity of effective electric field in the channel in an AlGaN/GaN high electron mobility transistor (HEMT). A unique performance, i.e., a nearly temperature-independent saturation drain current, was observed in the MMC device in a wide temperature range. A two-dimensional (2D) potential calculation indicates that the mesa-side gate effectively modulates the potential, resulting in a field surrounding 2D electron gas. Such a surrounding-field effect and a relatively lower source access resistance may be related to a unique current behavior in the MMC HEMT. 
TI - Nearly Temperature-Independent Saturation Drain Current in a Multi-Mesa-Channel AlGaN/GaN High Electron Mobility Transistor
JF - Applied Physics Express
DO - 10.1143/APEX.1.023001
DA - 2008-02-01
UR - https://www.deepdyve.com/lp/iop-publishing/nearly-temperature-independent-saturation-drain-current-in-a-multi-WRN57WUaWA
SP - 023001
VL - 1
IS - 2
DP - DeepDyve
ER -