TY - JOUR
AU - Manikandan, Esakkimuthu
AB - Single‐event transients (SETs) due to heavy‐ion (HI) strikes adversely affect the electronic circuits in the sub‐100 nm regime in the radiation environment. This study proposes techniques to mitigate SETs in CMOS voltage‐controlled oscillators (VCOs) without affecting the circuit specifications. A circuit asymmetry technique is used for faster recovery of the oscillator in the event of a single event transient (SET) caused by an ion hit. Also, a new SET tolerant inductor capacitor‐voltage controlled oscillator (LC‐VCO) topology is proposed for a radiation environment that shows reduced phase displacement, amplitude displacement, and recovery time. A comparison has been made with various LC‐VCOs that have an inherent rad‐hard capability which proves a significant improvement in SET sensitivity.
TI - Single event transient mitigation techniques for a cross‐coupled LC oscillator, including a single‐event transient hardened CMOS LC‐VCO circuit
JF - "IET Circuits, Devices & Systems"
DO - 10.1049/cds2.12094
DA - 2022-03-01
UR - https://www.deepdyve.com/lp/wiley/single-event-transient-mitigation-techniques-for-a-cross-coupled-lc-W9OJV1YaAo
SP - 178
EP - 188
VL - 16
IS - 2
DP - DeepDyve
ER -