TY - JOUR
AU - Aoki, Toru
AB - The spatial resolution of scintillator type imaging detector is not so high because diffusion of luminescence in thescintillator. As a countermeasure, the silicon substrate was processed to make a small grid by MEMS technique foroptical separation of scintillator. The silicon grid wall can completely obtain optical-separation for visible light as aresult of X-ray scintillation. Moreover, we can get large-size silicon wafers up to diameter of 30cm with high precisionsemiconductor process. In this paper, the purpose is to fill a scintillator material such as CsI:Tl, inside of the gridsubstrate. Because the aspect ratio of the grid is large (90μm x 90μm with 800μm depth), it is not easy to fill scintillatorinside the grid. Moreover, it is necessary to ensure uniformity, intention of light emission. In this study, the CsI:Tl wasfilled inside of the grid by resistive heated evaporation method. We evaluated by X-ray luminescence and test chart.
TI - CsI:Tl scintillator separated by Si grid partition wall
JF - Proceedings of SPIE
DO - 10.1117/12.2238424
DA - 2016-09-30
UR - https://www.deepdyve.com/lp/spie/csi-tl-scintillator-separated-by-si-grid-partition-wall-Vy20qhYfEq
SP - 99681H
EP - 99681H-7
VL - 9968
IS - 
DP - DeepDyve
ER -