TY - JOUR
AU1 - Han, Jin-Woo
AU2 - Choi, Byung Joon
AU3 - Yang, J Joshua
AU4 - Moon, Dong-Il
AU5 - Choi, Yang-Kyu
AU6 - Williams, R Stanley
AU7 - Meyyappan, M
AB - A replacement of high-k process was implemented on an independent double gate FinFET, following the ordinary gate-first process with minor modifications. The present scheme involves neither exotic materials nor unprecedented processing. After the source/drain process, the sacrificial gate oxide was selectively substituted with amorphous Ta2O5 via conformal plasma enhanced atomic layer deposition. The present gate-first gate-dielectric-last scheme combines the advantages of the process and design simplicity of the gate-first approach and the control of the effective gate workfunction and the interfacial oxide of the gate-dielectric-last approach. Electrical characterization data and cross-sectional images are provided as evidence of the concept.
TI - A replacement of high-k process for CMOS transistor by atomic layer deposition
JF - Semiconductor Science and Technology
DO - 10.1088/0268-1242/28/8/082003
DA - 2013-08-01
UR - https://www.deepdyve.com/lp/iop-publishing/a-replacement-of-high-k-process-for-cmos-transistor-by-atomic-layer-VpNfa0n5N2
SP - 082003
VL - 28
IS - 8
DP - DeepDyve
ER -