TY - JOUR
AU1 - Hu, Kewei
AU2 - Tang, Zhong
AU3 - Lu, Zhenghao
AU4 - Nianxiong Tan, Nick
AU5 - Yu, Xiaopeng
AB - In this paper, a bandgap reference (BGR) circuit that combines the capacitively biased diode (CBD) structure and the proportional‐to‐absolute‐temperature (PTAT) voltage‐embedded amplifier has been proposed. In order to enhance compatibility with digital domain supply voltage and achieve low power consumption, the supply voltage of the circuit is set at 0.9V$$ 0.9\kern0.1em \mathrm{V} $$, benefiting from the fact that both the CBD structure and the PTAT‐embedded amplifier can operate at sub‐1 V supply voltages. The circuit generates a complementary‐to‐absolute‐temperature (CTAT) voltage through the CBD structure. PTAT voltage is achieved by a PTAT‐embedded amplifier in a unity‐gain feedback configuration. The calibration of temperature coefficient (TC) is realized by applying a time‐domain trimming method through an on‐chip RC delay circuit. The reference clock frequency is a typical 32‐kHz crystal oscillator clock frequency, enabling high versatility of the circuit. Implemented in 0.13‐μ$$ \upmu $$m CMOS, measurement results show that the proposed BGR achieves an average temperature coefficient of 28 ppm/°C over −40°C to 125°C, voltage accuracy (σ/μ)$$ \left(\sigma /\mu \right) $$ of 0.25%, power supply rejection (PSR) of −50dB@10 Hz$$ -50\kern0.1em \mathrm{dB}@10\ \mathrm{Hz} $$, with an active area of 0.03mm2$$ 0.03\kern0.1em {\mathrm{mm}}^2 $$, and a power consumption of 747nW$$ 747\kern0.1em \mathrm{nW} $$.
TI - A 0.9‐V, 747‐nW Capacitively Biased Diode‐Based Single BJT Branch Bandgap Circuit
JF - International Journal of Circuit Theory and Applications
DO - 10.1002/cta.4438
DA - 2025-01-21
UR - https://www.deepdyve.com/lp/wiley/a-0-9-v-747-nw-capacitively-biased-diode-based-single-bjt-branch-VbDkVuxrBU
VL - Early View
IS - 
DP - DeepDyve
ER -