TY - JOUR
AU - Samedov, Victor V.
AB - Among the compound semiconductors, a cadmium zinc telluride material (CdZnTe) is appealing for hard X‐rayroom‐temperature detectors for medical and astrophysical applications. Despite the attractive properties of CdZnTe material such as high atomic number, high density, wide‐band gap, low chemical reactivity, and long‐term stability, poor hole and electron mobility‐lifetime products degrade the energy resolution of these detectors. For designing single polarity CdZnTe detectors insensitive to the hole transport, a hemispherical geometry is used. In this work, theoretical consideration of the stochastic process of charge induction in hemispherical geometry with accounting for electron trapping was considered. The formulae for the moments of the distribution function of the induced charge on the detector electrodes were derived. Copyright © 2017 John Wiley & Sons, Ltd. StartCopTextCopyright © 2017 John Wiley & Sons, Ltd.
TI - Induced charge fluctuations in hemispherical semiconductor detectors
JF - X-Ray Spectrometry
DO - 10.1002/xrs.2749
DA - 2017-09-01
UR - https://www.deepdyve.com/lp/wiley/induced-charge-fluctuations-in-hemispherical-semiconductor-detectors-VXaaEg4FP0
SP - 309
EP - 312
VL - 46
IS - 5
DP - DeepDyve
ER -