TY - JOUR
AU1 - Henkel, K
AU2 - Karavaev, K
AU3 - Torche, M
AU4 - Schwiertz, C
AU5 - Burkov, Y
AU6 - Schmeißer, D
AB - We investigate the dielectric properties of Praseodymium based oxides PrXOY by preparing MIS (metal insulator semiconductor) structures consisting of PrXOY as a high-k insulating layer and silicon (Si) or silicon carbide (SiC) as semiconductor substrates. The use of a buffer layer between PrXOY and the semiconductor is necessary as we found deleterious reactions between these materials such as silicate and graphite formation. Possessing a higher permittivity value (r) than silicon dioxide (SiO2) and good lattice matching in conjunction with similar thermal expansion coefficient to SiC, we focus on aluminum oxynitride (AlON) as a suitable buffer layer for this high-k/wide-bandgap system. In our spectroscopic investigations we found a decrease or indeed prevention of silicon diffusion into the oxide and an increased Pr2O3 fraction after deposition. In electrical characterizations of PrXOY/AlON stacks we found considerable improvements in the leakage current by several orders on both substrates, especially on silicon where we obtain values down to 107A/cm2 at a CET (capacitance equivalent thickness) of 4nm. We observed interface state densities in the range of 5 × 1011-1 × 1012/eVcm2 and 1-5 × 1012/eVcm2 on Si and SiC, respectively.
TI - Al-oxynitride interfacial layer investigations for PrXOY on SiC and Si
JF - Journal of Physics: Conference Series
DO - 10.1088/1742-6596/94/1/012004
DA - 2008-01-01
UR - https://www.deepdyve.com/lp/iop-publishing/al-oxynitride-interfacial-layer-investigations-for-prxoy-on-sic-and-si-VJhJZwsPUM
SP - 012004
VL - 94
IS - 1
DP - DeepDyve
ER -