TY - JOUR
AU1 - Takai, Yoshizo
AB - The rapid progress made in recent years in the field of nanotechnology has been remarkable. In semiconductor devices, it has become increasingly important to evaluate the reliability of not only the device itself but also the connection between the circuit board and the device terminals. This is especially true for semiconductor device packages developed in response to the needs of high‐density mounting. Therefore, new problems of insulation degradation are anticipated during the advances of semiconductor device packaging. Ion migration is one of the problems. Although the classical model of ion migration has been well known for several decades, the details of the migration process in semiconductor device packages are still unknown. In this study, we have analyzed the dendritic short‐circuit growth of Cu caused by ion migration in semiconductor device packages using shave‐off depth profiling and TEM‐EDX. The highly sensitive and unique depth profiling has provided indispensable information for discussion on the mechanisms of the dendritic short‐circuit growth. Copyright © 2006 John Wiley & Sons, Ltd.
TI - Shave‐off depth profiling of dendritic short‐circuit growth caused by ion migration
JF - Surface and Interface Analysis
DO - 10.1002/sia.2440
DA - 2006-12-01
UR - https://www.deepdyve.com/lp/wiley/shave-off-depth-profiling-of-dendritic-short-circuit-growth-caused-by-UsNXU02cxZ
SP - 1662
EP - 1665
VL - 38
IS - 12‐13
DP - DeepDyve
ER -