TY - JOUR
AU - Gong, Jeng
AB - This article presents the design of CMOS transmit/receive (T/R) switch circuits for ultra‐wideband applications. Techniques such as RF floated body to extend the bandwidth and decrease the insertion loss, and stacking architecture to enhance the power handling capability are used for the design of T/R switch circuits on a standard 0.18‐μm triple‐well process. The measurement of the T/R switch circuits demonstrates the effectiveness of the methods presented in this article. Two types of T/R switch circuits are designed and presented in this article. The T/R switch with non‐stacking architecture achieves an insertion loss less than 1.2 dB and an input 1‐dB compression point (IP1dB) of 24 dBm from DC to 10 GHz for. In addition, the T/R switch with stacking architecture exhibits a higher IP1dB of 27 dBm and an insertion loss less than 1.69 dB from DC to 10 GHz. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 322–326, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24948
TI - Design of DC to 10‐GHz broadband CMOS transmit/receive switch circuits
JF - Microwave and Optical Technology Letters
DO - 10.1002/mop.24948
DA - 2010-02-01
UR - https://www.deepdyve.com/lp/wiley/design-of-dc-to-10-ghz-broadband-cmos-transmit-receive-switch-circuits-UqE0B5E6HX
SP - 322
EP - 326
VL - 52
IS - 2
DP - DeepDyve
ER -