TY - JOUR
AU1 - Lambrechts, J. W.
AB - In this work, the frequency response of a single-element, direct band gap indium gallium arsenide (In0.53Ga0.47As)infrared photo-detector on a lattice matched indium phosphide (InP) substrate is investigated by varying the intrinsiclayer doping concentration. The intrinsic device operation and transport physics are theoretically determined andsimulated. The epitaxial layer structure, physical dimensions, doping profiles and carrier concentrations are modelled fora complete PIN photodetector with cut-off wavelength of 1680 nm at 295 K. The calculated and simulated deviceperformance parameters are based on the responsivity, quantum efficiency, dark-current in reverse-biased operation,frequency bandwidth and intrinsic junction capacitance. These parameters are also measured and the frequency responseis determined by a low-power 1064 nm neodymium-doped yttrium aluminium garnet (Nd:YAG) pulsed laser at theoutput of a high-gain transimpedance amplifier. The shortest measurable pulse rise-time for this configuration is 12.4 ns.The dark-current, frequency response and intrinsic junction capacitance results are used to represent the equivalentcircuit model of the photodetector at the input of the transimpedance amplifier. The primary goal is to identify thevariations in performance based on the intrinsic layer composition, manufacturing considerations and epitaxialenhancements to improve the bandwidth of such a device.
TI - High-frequency pulsed laser response of a PIN InGaAs photodetector
JF - Proceedings of SPIE
DO - 10.1117/12.2245412
DA - 2016-02-03
UR - https://www.deepdyve.com/lp/spie/high-frequency-pulsed-laser-response-of-a-pin-ingaas-photodetector-Ub4cejzffo
SP - 100360Z
EP - 100360Z-9
VL - 10036
IS - 
DP - DeepDyve
ER -