TY - JOUR
AU1 - Ken-ichi Yoshimoto, Ken-ichi Yoshimoto
AU2 - Satoko Shinkai, Satoko Shinkai
AU3 - Katsutaka Sasaki, Katsutaka Sasaki
AB - As a preliminary examination for improving the reliability of the Cu metallization system of Si-LSI, we prepared Cu/Hf/Si, Cu/CuHf2/Hf/Si and Cu/HfN/Hf/Si contact systems, and compared their thermal stabilities. The change in crystal structure and the interdiffusion behavior were investigated by  X-ray diffraction and Auger electron spectroscopy, respectively. In the case of Cu/CuHf2/Hf/Si, its thermal stability was slightly superior to that of Cu/Hf/Si without the CuHf2 layer. However, slight outdiffusion of Si to the Cu surface was also observed, similar to the case of Cu/Hf/Si. On the other hand,  the Cu/HfN/Hf/Si system was satisfactorily stable up to 630°C. In addition, it was revealed that Hf silicide containing Hf3Si2 that has the lowest contact resistivity can be maintained at the Si interface up to 630°C. 
TI - Application of HfN/Hf Bilayered Film as a Diffusion Barrier for Cu Metallization System   of Si Large-Scale Integration
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.39.1835
DA - 2000-04-01
UR - https://www.deepdyve.com/lp/iop-publishing/application-of-hfn-hf-bilayered-film-as-a-diffusion-barrier-for-cu-UALV20vw3y
SP - 1835
VL - 39
IS - 4R
DP - DeepDyve
ER -