TY - JOUR
AU1 - Sands, T.
AB - Abstract The development of high-performance, stable and laterally uniform contacts to compound semiconductors is ah essential step in the ongoing miniaturization of electronic and optoelectronic devices. In this overview, the potential contributions of the materials science community to this effort are discussed. It is argued that the most urgent needs are: experimental determination of M-A-B equilibrium phase diagrams where M is a metal and AB is the compound semiconductor (e.g.,GaAs, InP and CdTe); and comprehensive studies of the interrelationships between processing, interfacial microstructure and electrical properties of thin metal films on compound semiconductors. Application of advanced materials characterization techniques, such as heavy-ion Rutherford backscattering spectrometry and atomic resolution electron microscopy, that are especially well-suited to compound semiconductor studies promise to enhance our understanding of M/AB systems.
TI - Contacts to Compound Semiconductors
JF - JOM
DO - 10.1007/BF03258577
DA - 1986-10-01
UR - https://www.deepdyve.com/lp/springer-journals/contacts-to-compound-semiconductors-Teq7yVVriU
SP - 31
EP - 33
VL - 38
IS - 10
DP - DeepDyve
ER -