TY - JOUR AU - AB - This article has been accepted for publication in IEEE Transactions on Nuclear Science. This is the author's version which has not been fully edited and content may change prior to final publication. Citation information: DOI 10.1109/TNS.2023.3326481 Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs Stefano Bonaldo, Member, IEEE, Trace Wallace, Member, IEEE, Hugh Barnaby, Fellow, IEEE, Giulio Borghello, Member, IEEE, Gennaro Termo, Federico Faccio, Member, IEEE, Daniel M. Fleetwood, Fellow, IEEE, Serena Mattiazzo, Marta Bagatin, Member, IEEE, Alessandro Paccagnella, Senior Member, IEEE, Simone Gerardin, Member, IEEE Positive charge in the STI increases off-state leakage current in Abstract— We provide comprehensive experimental data and n-channel FETs due to the activation of lateral parasitic technology computer-aided design simulations to clarify total- transistors [9],[19],[20] and induces parametric drifts in n- and ionizing-dose mechanisms in 16-nm Si FinFETs. In n-channel p-channel FETs. The worst-case degradation is found in FinFETs irradiated to ultra-high doses the transconductance narrow-channel transistors due to the radiation-induced narrow- evolution rebounds (increase up to 3-10 Mrad followed by a channel effect (RINCE) [6],[9],[10]. For example, positive decrease), while the drain-to-source leakage current steadily charge trapped in the STI of pFETs can lead to decreased augments until reaching a plateau TI - Radiation-Induced Charge Trapping in Shallow Trench Isolations of FinFETs JF - IEEE Transactions on Nuclear Science DO - 10.1109/tns.2023.3326481 DA - 2023-01-01 UR - https://www.deepdyve.com/lp/unpaywall/radiation-induced-charge-trapping-in-shallow-trench-isolations-of-TP5aadjXHk DP - DeepDyve ER -