TY - JOUR
AU1 - Aleksandrov, M.
AU2 - Asinovskii, L.
AU3 - Mel'tsin, A.
AU4 - Tolokonnikov, V.
AB - M. L. Aleksandrov, L. M. Asinovskii, A. L. Mel'tsin, and V. A. Tolokonnikov UDC 543.42 In recent years much progress has been made in the development of methods for monitoring the structure of surfaces and near-surface layers and their impurity composition. Low- energy electron diffraction (LEED) at small angles, scattered-ion spectroscopy, Auger electron spectroscopy, and a number of other methods yield valuable information about the structure of near-surface layers of ordered crystalline structures. In studying disordered amorphous surface films and boundaries between media, however, these methods of analysis are not as informative [i]. To solve these problems optical methods turn out to be very useful: ellipsometry, reflectance IR spectroscopy, Raman spectroscopy, photoluminescence, etc. It is significant that these measurement methods are contact-free and nondestructive (unlike ionic and electronic methods), and they can be employed in a wide range of temperatures in a vacuum and in corrosive media. In addition, the determining role of the surface layer of the object under study in the formation of the reflected wave and the concomitant high sensitivity of its polarization to structural changes in this layer make ellipsometry one of the basic methods for studying thin - from 0.i to 20 nm - 
TI - Methods and apparatus for complete ellipsometry (review)
JF - Journal of Applied Spectroscopy
DO - 10.1007/BF00659250
DA - 2004-11-03
UR - https://www.deepdyve.com/lp/springer-journals/methods-and-apparatus-for-complete-ellipsometry-review-TOANBTpjhc
SP - 559
EP - 578
VL - 44
IS - 6
DP - DeepDyve
ER -