TY - JOUR
AU1 - Vijayakumar, P.
AU2 - Manikandan, C.
AU3 - Sarguna, R. M.
AU4 - Amaladass, Edward Prabu
AU5 - Ganesan, K.
AU6 - Roy, Varsha
AU7 - Varadarajan, E.
AU8 - Ganesamoorthy, S.
AB - Abstract:A novel bottom-cooling high-temperature solution growth technique is developed for growing large-sized relaxor ferroelectric 0.91Pb(Zn1/3Nb2/3O3)-0.09PbTiO3 (PZN-PT) single crystals. During the growth, an inverse temperature gradient is maintained in the crucible base by flowing air at a controlled rate. This method restricts the number of spontaneously nucleated crystals at crucible bottom, reduces loss of volatile PbO component and favours the growth of large-sized PZN-PT single crystals. Large-sized PZN-PT single crystals of dimensions ~ 22x20x14 mm3 are reproducibly grown by the proposed method. The electrical characteristics of the PZN-PT wafers oriented along the <100>, <010> and <001> directions are investigated. PZN-PT wafers oriented along the <001> direction exhibited superior piezoelectric coefficient (d33) of ~ 2221 pm/V. The homogeneity of the physical parameters is analysed by preparing 10 elements with dimensions of ~5x2.5x2.5 mm3 which were cut from single wafer oriented along the <001> direction. The ferro-, piezo- and dielectric characteristics of these wafers were found to be highly uniform with small standard deviation. The observation of d33 value with less than 2 % deviation from mean value confirms the growth of high quality PZN-PT single crystals.
TI - Growth of large-sized relaxor ferroelectric PZN-PT single crystals by modified flux growth method
JF - Physics
DO - 10.1016/j.jcrysgro.2023.127462
DA - 2023-12-11
UR - https://www.deepdyve.com/lp/arxiv-cornell-university/growth-of-large-sized-relaxor-ferroelectric-pzn-pt-single-crystals-by-SlBurXmnP2
VL - 2023
IS - 2312
DP - DeepDyve
ER -