TY - JOUR
AU - Kim, Sangsig
AB - We construct fully transparent nano-floating gate memory devices on a glass substrate.These memory thin-film transistors consist of channel layers of ZnO films, electrodes ofAl/ITO, and floating gate nodes of Al nanoparticles, exhibiting a transmittance of  71% in the visible region. Their electron mobility,on/off ratio, and threshold voltage shift are estimated to be0.92  cm2 V  1 s  1, about104, and 3.1 V, respectively. Moreover, their programming/erasing, endurance and retention arecharacterized in this study. Our study suggests that our memory devices have greatpotential for realizing transparent systems-on-glass. 
TI - Transparent nano-floating gate memory on glass
JO - Nanotechnology
DO - 10.1088/0957-4484/21/33/335201
DA - 2010-08-20
UR - https://www.deepdyve.com/lp/iop-publishing/transparent-nano-floating-gate-memory-on-glass-SKr83tYWaC
SP - 335201
VL - 21
IS - 33
DP - DeepDyve
ER -