TY - JOUR
AU - Matthias Scheffler, Matthias Scheffler
AB - We perform ab initio calculations to obtain the  formation energy of thin InAs films grown on the GaAs(001) substrate.  For the island surface morphology, a hybrid method combining   ab initio calculations and elasticity theory is employed.  Our results show that two-dimensional growth is favored  for the first monolayer in a wide range of chemical potentials.  Additional deposited material may transform the surface  morphology  into the three-dimensional island growth mode.  The driving force behind  this surface morphology change is relieving the elastic energy in the films. 
TI - Energetics of InAs Thin Films  and Islands on the GaAs(001) Substrate 
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.39.4298
DA - 2000-07-01
UR - https://www.deepdyve.com/lp/iop-publishing/energetics-of-inas-thin-films-and-islands-on-the-gaas-001-substrate-SEZ4huwuSq
SP - 4298
VL - 39
IS - 7S
DP - DeepDyve
ER -