TY - JOUR
AU1 - Matsuzaka, T.
AU2 - Saitou, N.
AU3 - Okumura, M.
AU4 - Matsuoka, G.
AU5 - Ohyama, M.
AB - An electron beam lithography system has been developed for research and development of fine structure advanced devices. The system is capable of 0.1 um resolution, 0.04 um stitching accuracy, 0.04 um overlay accuracy and 1 wafer/hr throughput. One of key technologies used in this system is a variable gaussian optics and a pattern edging-process. This makes it possible to realize ten times higher throughput than the conventional fixed gaussian beam method and provide a simple means of proximity correction.
TI - A High Speed Nanometric Electron Beam Lithography System
JF - Proceedings of SPIE
DO - 10.1117/12.940376
DA - 1987-06-30
UR - https://www.deepdyve.com/lp/spie/a-high-speed-nanometric-electron-beam-lithography-system-S1mn4OQuD0
SP - 234
EP - 239
VL - 773
IS - 
DP - DeepDyve
ER -