TY - JOUR
AU - Li, Ting
AB - We report on the development of a temperature-dependent electroluminescence experimental setup for characterizing the internal quantum efficiency (IQE) of high-brightness GaN-based light-emitting diodes (LEDs). A systematic IQE study of commercial LED chips from major LED manufacturers (including Cree, Nichia, Osram, and Sanan) is presented. The chips show distinctive temperature- and current-dependence in the IQE behavior. Analysis to correlate the onset of droop with the onset of high injection is also presented.
TI - Comprehensive study of internal quantum efficiency of high-brightness GaN-based light-emitting diodes by temperature-dependent electroluminescence method
JF - Proceedings of SPIE
DO - 10.1117/12.2040710
DA - 2014-02-27
UR - https://www.deepdyve.com/lp/spie/comprehensive-study-of-internal-quantum-efficiency-of-high-brightness-RrR980a0Ax
SP - 90030D
EP - 90030D-8
VL - 9003
IS - 
DP - DeepDyve
ER -