TY - JOUR
AU - Sun, Shih-Wei
AB - This paper describes a novel shallow-trench isolation (STI) structure to suppress the corner metal-oxide semiconductor field-effect transistor (MOSFET) inherent to trench isolation. A gate oxide and a thin polysilicon layer are first processed, and are then followed by the STI process. With this raised-field-oxide structure, the anomalous subthreshold conduction of the shallow-trench isolated MOSFETs due to electric-field crowding at the active edge has been successfully eliminated. No inverse-narrow-width effect is observed as the device width has been scaled down to 0.3 µm. The raised-field-oxide structure provides a larger process margin for planarization, and good device characteristics were achieved by this novel STI structure. 
TI - Shallow-Trench Isolation With Raised-Field-Oxide Structure
JF - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.39.1080
DA - 2000-03-01
UR - https://www.deepdyve.com/lp/iop-publishing/shallow-trench-isolation-with-raised-field-oxide-structure-R3uXldpFSe
SP - 1080
VL - 39
IS - 3R
DP - DeepDyve
ER -