TY - JOUR
AU1 - Reynolds, Gillian A. M.
AU2 - Hughes, Greg P.
AU3 - Jones, David J.
AB - We have developed a new attenuating embedded phase-shift mask blank for 193 nm lithography based on novel TiSi-nitride chemistry. At 193 nm, these materials offer high optical transmission, they are radiation damage resistant, stable in common chemicals used to strip photoresist, process compatible with use of a hard Cr etch mask, and exhibit good dry etch selectivity to quartz. Specifically, optical transmissions of greater than 10% were achieved in films with 180 degree phase- shift. Irradiation at 6 mJ/cm 2 /pulse, or approximately 60x the energy densities in commercial steppers, caused small change in optical transmission for doses up to 2 kJ/cm 2 . Dry etching the films in an ICP reactor with CF 4 gave a greater than 6:1 etch selectivity to quartz. Further, the novel wavelength-tunable structure of these TiSi-nitride films permits equally attractive phase-shift designs at 248 nm and longer wavelengths.
TI - TiSi-nitride attenuating phase-shift photomask for 193-nm lithography
JF - Proceedings of SPIE
DO - 10.1117/12.332857
DA - 1998-12-18
UR - https://www.deepdyve.com/lp/spie/tisi-nitride-attenuating-phase-shift-photomask-for-193-nm-lithography-R2reChLz09
SP - 514
EP - 523
VL - 3546
IS - 1
DP - DeepDyve
ER -