TY - JOUR
AU1 - Shestakov, V.
AU2 - Ermakova, Е.
AU3 - Sysoev, S.
AU4 - Kosyakov, V.
AU5 - Kosinova, M.
AB - Thermodynamic modeling of the process of chemical vapor deposition (CVD) of SiC
x
 and SiC
x
N
y
 films from the gas phase was carried out using organosilicon compounds (EtN(SiMe3)2, PhN(SiMe3)2, and PhSiMe3) at reactor pressures of 0.01 and 10 Torr in the temperature range of 500–1200 K. It was established that regions of existence of two phase complexes, namely, SiC + Si3N4 + C and SiC + C, were present on the CVD diagrams calculated for the EtN(SiMe3)2—He and PhN(SiMe3)2—He systems. The CVD diagrams calculated for the EtN(SiMe3)2—NH3, PhN(SiMe3)2—NH3, and PhSiMe3—NH3 systems have regions of existence of three phase complexes, namely, Si3N4 + C, SiC + Si3N4 + C, and SiC + C. The composition of the obtained silicon-containing films was calculated.
TI - Thermodynamic modeling of the deposition of Si—C—N films from the gas phase during the decomposition of organosilicon compounds
JF - Russian Chemical Bulletin
DO - 10.1007/s11172-018-2167-7
DA - 2018-09-27
UR - https://www.deepdyve.com/lp/springer-journals/thermodynamic-modeling-of-the-deposition-of-si-c-n-films-from-the-gas-Qg0abm0oJi
SP - 980
EP - 985
VL - 67
IS - 6
DP - DeepDyve
ER -