TY - JOUR
AU - French, I.
AB - Abstract— Top‐gate and bottom‐gate microcrystalline‐silicon thin‐film transistors (TFTs) have been produced at low temperature (150–250°C) by the standard radio‐frequency glow‐discharge technique using three preparation methods: the hydrogen dilution of silane in hydrogen, the layer‐by‐layer technique, and the use of SiF4‐Ar‐H2 feedstock. In all cases, a stable top‐gate TFT with mobility values around 1 cm2/V‐sec have been achieved, making them suitable for basic circuit on glass applications. Moreover, the use of SiF4 gas combined with specific plasma treatments of the a‐SiN:H dielectric produces large columns, even at the interface with the dielectric. This leads to stable bottom‐gate TFTs, fully compatible with today's a‐Si:H production facilities, reaching mobility values up to 3 cm2/V‐sec. These devices are an interesting alternative to laser‐crystallized polysilicon thin films in a growing number of applications.
TI - Microcrystalline silicon: An emerging material for stable thin‐film transistors
JF - Journal of the Society for Information Display
DO - 10.1889/1.1824232
DA - 2004-03-01
UR - https://www.deepdyve.com/lp/wiley/microcrystalline-silicon-an-emerging-material-for-stable-thin-film-QVFQu602Qc
SP - 3
VL - 12
IS - 1
DP - DeepDyve
ER -