TY - JOUR
AU - Krikunov, A. I.
AB - Abstract The results of studies of characteristics of spin-tunneling magnetoresistive (STMR) elements fabricated from multilayered nanostructures using a mask technique have been considered. The parameters of magnetic annealing of STMR elements have experimentally been obtained. The results of these experiments have shown that a magnitude of the magnetoresistive effect can increase by four to five or more times. The test samples of STMR elements, which have a magnitude of the giant magnetoresistive effect up to 50% and a resistance of 30–35 kΩ, have been studied in the absence of a magnetic field.
TI - Spin-tunneling magnetoresistive elements based on multilayered nanostructures
JF - "Technical Physics"
DO - 10.1134/S1063784217080023
DA - 2017-08-01
UR - https://www.deepdyve.com/lp/springer-journals/spin-tunneling-magnetoresistive-elements-based-on-multilayered-Q60AxQ05cu
SP - 1281
EP - 1283
VL - 62
IS - 8
DP - DeepDyve
ER -