TY - JOUR
AU - Brown, Giles J
AB - A process for fabricating MEMS devices using a silicon on insulator (SOI) wafer bonded to a substrate glass or silicon wafer is presented. In this process, the device layer of the SOI wafer is bonded to the substrate wafer, and the handle and SiO2 layers of the SOI wafer are subsequently removed. This method of manufacturing MEMS devices using SOI wafers offers important advantages over alternative SOI wafer processes, and is being implemented to manufacture high accuracy MEMS inertial devices.
TI - SOI bonded wafer process for high precision MEMS inertial sensors
JF - Journal of Micromechanics and Microengineering
DO - 10.1088/0960-1317/15/8/030
DA - 2005-08-01
UR - https://www.deepdyve.com/lp/iop-publishing/soi-bonded-wafer-process-for-high-precision-mems-inertial-sensors-PCd2htC5CV
SP - 1588
VL - 15
IS - 8
DP - DeepDyve
ER -