TY - JOUR
AU - Lee, Jang‐Sik
AB - A novel device structure is presented for amorphous oxide semiconductor thin‐film transistors with high performance as well as improved electrical/optical stress stability. The highly stable transistor devices are developed using composition‐modulated dual active layers. This approach could potentially be used to fabricate product‐level display devices using amorphous oxide semiconductors in the near future.
TI - Highly Stable Transparent Amorphous Oxide Semiconductor Thin‐Film Transistors Having Double‐Stacked Active Layers
JF - Advanced Materials
DO - 10.1002/adma.201002397
DA - 2010-12-21
UR - https://www.deepdyve.com/lp/wiley/highly-stable-transparent-amorphous-oxide-semiconductor-thin-film-P4PeHWi0eY
SP - 5512
EP - 5516
VL - 22
IS - 48
DP - DeepDyve
ER -