TY - JOUR
AU - Matsumura, Masakiyo
AB - Chemical-vapor-deposited (CVD) amorphous-silicon films have been applied as the active layer in thin-film transistors with a top-gate structure for the first time. The maximum field-effect mobility and the typical on/off current ratio were more than 0.5 cm2·V-1·s-1 and 107, respectively. The characteristics were better than the ones based on plasma-enhanced CVD. 
TI - Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
JO - Japanese Journal of Applied Physics
DO - 10.1143/JJAP.29.L2366
DA - 1990-12-01
UR - https://www.deepdyve.com/lp/iop-publishing/top-gate-amorphous-silicon-thin-film-transistors-produced-by-cvd-OFXHiKoafy
SP - L2366
VL - 29
IS - 12A
DP - DeepDyve
ER -