TY - JOUR
AU - Yen, Anthony
AB - Abstract.We present a series of baseline techniques for inspection, cleaning, repair, and native defect mitigation of extreme ultraviolet (EUV) masks. Deep-ultraviolet inspectors are capable of inspecting patterns down to about 45 nm in pitch on wafer. Cleaning methods involving both chemical and physical forces have achieved good particle removal efficiency while minimizing absorber shrinkage and have realized 90% PRE in removing particles from the backside of an EUV mask. In addition, our compensation method for native defect repair has achieved partial success.
TI - Mask defect management in extreme-ultraviolet lithography
JO - Journal of Micro/Nanolithography, MEMS and MOEMS
DO - 10.1117/1.JMM.13.2.023010
DA - 2014-04-01
UR - https://www.deepdyve.com/lp/spie/mask-defect-management-in-extreme-ultraviolet-lithography-NwFZ4MWWws
SP - 023010
EP - 023010
VL - 13
IS - 2
DP - DeepDyve
ER -