TY - JOUR
AU - Zhang, Sheng
AB - Hybrid systems integrating embedded non-volatile memory (eNVM) with SRAM have emerged as a research focus. In these systems, hafnium-zirconium oxide (HZO)-based ferroelectric RAM (FeRAM) demonstrates superior performance over conventional solutions. This technology features ultralow write energy, exceptional endurance (> 109 cycles), and nanosecond-scale operation speeds. However, FeRAM suffers from polarization fatigue during prolonged cycling, characterized by oxygen vacancy aggregation and domain wall pinning, which degrade remnant polarization (± Pr) and compromise read reliability. To address this, a memory architecture that integrates a hardware-software cooperative refresh scheme is proposed, utilizing a Local Static Field Compensation (LSFC) circuit to apply an enhanced electric field, thereby facilitating oxygen vacancy migration and domain wall depinning. Experimental results demonstrate a stable read margin after 3×109 program/erase cycles. This work provides a breakthrough solution for FeRAM’s commercialization, particularly in edge AI and IoT systems, by resolving critical endurance and reliability challenges.
TI - A design of memory architecture for enhancing FeRAM endurance
JF - Journal of Physics: Conference Series
DO - 10.1088/1742-6596/3033/1/012043
DA - 2025-06-01
UR - https://www.deepdyve.com/lp/iop-publishing/a-design-of-memory-architecture-for-enhancing-feram-endurance-NmzgxGceII
VL - 3033
IS - 1
DP - DeepDyve
ER -