TY - JOUR
AU - Ishikawa, Hajime
AB - Thermal nitridation of a thin SiO2 film in purified NH3 gas at elevated temperatures produces a strong protective layer against impurity diffusion. This enables fabrication of a reliable MOS structure with a high work function gate material such as p+ polysilicon. This combination is advantageous for miniaturized MOSFETs because a reasonable threshold voltage is obtainable without a high dose of channel ion implantation which deteriorates carrier mobilities and interfacial properties. Experimental results indicate easy incorporation of a nitrified SiO2 film in the conventional MOS process. 
TI - Ammonia-Annealed SiO2 Films for Thin-Gate Insulator
JF - Japanese Journal of Applied Physics
DO - 10.7567/JJAPS.21S1.153
DA - 1982-01-01
UR - https://www.deepdyve.com/lp/iop-publishing/ammonia-annealed-sio2-films-for-thin-gate-insulator-NIVprM0rGT
SP - 153
VL - 21
IS - S1
DP - DeepDyve
ER -