TY - JOUR
AU - Saura, J.
AB - JOURNAL OF MATERIALS SCIENCE LETTERS 9 (1990) 47-48 Isothermal close-spaced vapour growth of CdTe for CdS/CdTe solar cells P. O. VACCARO, J. SAURA Centro Atomico Bariloche, 8400 SC de Bariloche, Rio Negro, Argentina CdS(n)/CdTe(p) thin-film solar cells with an effi- methods: sintering and isothermal close-spaced va- ciency of >10% have been prepared by several pour transport (ICSVT). fabrication methods. These methods include close- The sintering of CdTe on the CdS sintered layer spaced vapour transport [1] and sintering [2]. Sinter- was carried out with the CdTe slurry in the same way ing, usually preceded by screen printing, has been as for the CdS for 1 h in nitrogen atmosphere at especially attractive owing to the simplicity of the temperatures from 600 to 640 °C. equipment and the small amount of waste material. For ICSVT, soda-glass substrates were painted This method implies coating the substrate with a with the CdTe slurry through openings in an slurry prepared with the semiconductor powder, an adhesive tape mask, and were dried in air at 100 °C. adequate binder and a sintering aid. These CdTe dry films were used as the sources and The Matsushita group has reported the commer- the CdS sintered layers 
TI - Isothermal close-spaced vapour growth of CdTe for CdS/CdTe solar cells
JF - Journal of Materials Science Letters
DO - 10.1007/BF00724429
DA - 1991-01-01
UR - https://www.deepdyve.com/lp/springer-journals/isothermal-close-spaced-vapour-growth-of-cdte-for-cds-cdte-solar-cells-NA1c0bZ8hg
SP - 47
EP - 48
VL - 10
IS - 1
DP - DeepDyve
ER -