TY - JOUR
AU - Agarwal, Ajay
AB - The paper presents a reproducible and fully complementary metal–oxide–semiconductor (CMOS) compatible technique for fabricating silicon nanowire sensors for biochemical analysis. Top-down approach for fabricating silicon nanowire has been explored to achieve silicon nanowire dimension up to ∼150 nm. Presented fabrication technique is based on the fact of 44 % silicon consumption during thermal oxidation process. Fabricated nanowires are further processed to make silicon nanowire sensors. These nanowire sensors respond to the change in applied back-gate voltage. To prove the advantage of nanowire sensors over micron dimension sensors, two sensors with different silicon wire width (1.5 and 0.29 μm) are characterized for the same back-gate voltage and the current modulation was observed to be 25.05 % and 54.9 %, respectively. These silicon nanowire sensors are characterized for repeatability as well.
TI - Reproducible Silicon Nanowire Sensors Platform
JF - BioNanoScience
DO - 10.1007/s12668-012-0058-1
DA - 2012-09-27
UR - https://www.deepdyve.com/lp/springer-journals/reproducible-silicon-nanowire-sensors-platform-N8CcMBrepH
SP - 218
EP - 222
VL - 2
IS - 4
DP - DeepDyve
ER -