TY - JOUR
AU1 - Lu, Chao
AU2 - Ji, Xueqiang
AU3 - Liu, Zeng
AU4 - Yan, Xu
AU5 - Lu, Nianpeng
AU6 - Li, Peigang
AU7 - Tang, Weihua
AB - β-Gallium oxide (β-Ga2O3) has been studied extensively in recent decades due to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors and power devices. However, as an important part of a device, related investigations of β-Ga2O3–metal contacts, especially for Schottky contacts, are rare. In this review, we summarize recent research progress on β-Ga2O3–metal contacts, including related theories, measurements, fabrication processes, control methods, etc. This review will provide insights for both theoretical understanding of the metal/semiconductor interface, as well as the fabrication process for engineering applications of Ga2O3-based devices.
TI - A review of metal–semiconductor contacts for β-Ga2O3
JF - Journal of Physics D Applied Physics
DO - 10.1088/1361-6463/ac8818
DA - 2022-11-17
UR - https://www.deepdyve.com/lp/iop-publishing/a-review-of-metal-semiconductor-contacts-for-ga2o3-Mzsev3oJsU
VL - 55
IS - 46
DP - DeepDyve
ER -