TY - JOUR
AU - Chen, Tzer-Perng
AB - The structures and performances of surface emitting AlGaInP green light emitting diodes (LEDs) with emission wavelength around 565 nm were studied. The AlGaInP green LEDs with epitaxial structure grown on P-type GaAs substrate showed the best performance. This is the first paper ever reported for the fabrication of AlGaInP LEDs using P-type GaAs as a substrate. In AlGaInP LED structure using P-type GaAs substrate, the highly conductive n- type AlInP was consequently used as a top confining layer and the current crowding problem was significantly improved. Therefore, the green electroluminescence (EL) was uniformly emitted from the surface of LED dice.
TI - AlGaInP green light-emitting diode
JF - Proceedings of SPIE
DO - 10.1117/12.131244
DA - 1992-10-23
UR - https://www.deepdyve.com/lp/spie/algainp-green-light-emitting-diode-LnweAonyV0
SP - 136
EP - 141
VL - 1813
IS - 1
DP - DeepDyve
ER -