TY - JOUR
AU - Juang, Miin‐Horng
AB - The integrity of thin gate oxide structures fabricated by implanting  ions into bilayered CoSi/amorphous silicon films and subsequent annealing has been studied as a function of cobalt silicide thickness and implantation energy. Significant degradation of gate oxide integrity and flatband voltage shifts were found with increasing cobalt silicide thickness and annealing temperature. It is shown that although thinner cobalt silicide can result in excellent gate dielectric integrity it also leads to worse thermal stability at a high annealing temperature. Moreover, shallower implantation depth and lower annealing temperature can reduce the boron penetration, but depletion effects in polycrystalline silicon gates are caused accordingly. Hence, appropriate process conditions, involving trade‐offs among  thickness, implantation energy and annealing temperature, must be used to optimize the device performance while retaining the thin dielectric reliability.
TI - Effects of CoSi2 on p+ Polysilicon Gates Fabricated by  BF 2  +  Implantation into CoSi/Amorphous Si Bilayers
JF - Journal of the Electrochemical Society
DO - 10.1149/1.1838847
DA - 1998-10-01
UR - https://www.deepdyve.com/lp/iop-publishing/effects-of-cosi2-on-p-polysilicon-gates-fabricated-by-bf-2-LDYvEXyl0O
SP - 3590
EP - 3594
VL - 145
IS - 10
DP - DeepDyve
ER -