TY - JOUR
AU - Xiong, Yanyan
AB - Numerical analysis of the current spreading and carrier diffusion problem for four popular long wavelength vertical-cavity surface-emitting lasers (VCSELs) structures is presented. The results show that current confinement for p -mirror VCSELs is twice as effective as the corresponding n -mirror VCSELs. We also demonstrate the design, fabrication and device characterization for long wavelength 1.3 ॖm VCSELs, where oxygen-implanted current-confinement regions were formed in a GaAs/AlGaAs Bragg reflector bottom mirror, which was wafer-bonded to an AlGaInAs/InP cavity consisting of nine strain-compensated quantum wells. Room temperature continuous-wave (cw) operation of 1.3 ॖm VCSELs with a record low threshold current density of 1.57 kA/cm 2 and a record low threshold current of 1 mA is realized. Also, a record low pulsed threshold current density of 454 A/cm 2 and a threshold current of 0.83 mA at 20° C are achieved. The maximum cw and pulsed operating temperatures are 40° C and above 100° C , respectively. © 1998 Society of Photo-Optical Instrumentation Engineers.
TI - Wafer-bonded 1.3-ॖm vertical-cavity surface-emitting lasers
JF - Optical Engineering
DO - 10.1117/1.601984
DA - 1998-12-01
UR - https://www.deepdyve.com/lp/spie/wafer-bonded-1-3-m-vertical-cavity-surface-emitting-lasers-L4dfRK4MjP
SP - 3100
EP - 3105
VL - 37
IS - 12
DP - DeepDyve
ER -