TY - JOUR
AU - Usui, Akira
AB - The growth of high-crystalline-quality GaN by hydride vapor phase epitaxy, focusing on dislocation density reduction, was studied, and a facet-initiated epitaxial lateral overgrowth (FIELO) method has been proposed. In this method, a GaN layer develops by the overgrowth of facet structures generated from narrow channels opened in a SiO2 mask formed on a GaN template. The threading dislocations changed their propagation direction, bending in the horizontal direction, due to the facet structure. To reduce the number of threading dislocations through the channels, we propose a novel FIELO method with nanometer-size channels. The dislocation density was found to decrease to 4.5 × 107 cm−2 for a 20-μm-thick GaN layer. We also developed random-island FIELO, in which micrometer-size small islands are initially formed on a TiC buffer layer by low-temperature growth of GaN on a sapphire substrate. Under higher growth temperatures that follow, the growth of these small islands changes to three-dimensional (3D) growth with facet planes. The 3D growth was maintained for a thickness of approximately 100–200 μm. As a result, the dislocation density was reduced to ∼3 × 106 cm−2. Freestanding 2- and 4-inch-diameter GaN substrates were also successfully fabricated by using the random-island FIELO method.
TI - Gallium Nitride Crystals Grown by Hydride Vapor Phase Epitaxy with Dislocation Reduction Mechanism
JO - ECS Journal of Solid State Science and Technology
DO - 10.1149/2.010308jss
DA - 2013-01-01
UR - https://www.deepdyve.com/lp/iop-publishing/gallium-nitride-crystals-grown-by-hydride-vapor-phase-epitaxy-with-KX0SkYuLNK
SP - N3045
VL - 2
IS - 8
DP - DeepDyve
ER -