TY - JOUR
AU - Tauchi, K
AB - We are developing monolithic pixel detector using fully-depleted (FD) silicon-on-insulator (SOI) pixel process technology. The SOI substrate is high resistivity silicon with p-n junctions and another layer is a low resistivity silicon for SOI-CMOS circuitry. Tungsten vias are used for the connection between two silicons. Since flip-chip bump bonding process is not used, high sensor gain in a small pixel area can be obtained. In 2010 and 2011, high-resolution integration-type SOI pixel sensors, DIPIX and INTPIX5, have been developed. The characterizations by evaluating pixel-to-pixel crosstalk, quantum efficiency (QE), dark noise, and energy resolution were done. A phase-contrast imaging was demonstrated using the INTPIX5 pixel sensor for an X-ray application. The current issues and future prospect are also discussed.
TI - SOI monolithic pixel detector
JO - Journal of Instrumentation
DO - 10.1088/1748-0221/9/05/C05044
DA - 2014-05-01
UR - https://www.deepdyve.com/lp/iop-publishing/soi-monolithic-pixel-detector-KNe5Nx80QL
SP - C05044
VL - 9
IS - 05
DP - DeepDyve
ER -