TY - JOUR
AU - Saxena, A. N.
AB - The use of an improved microelectronic test structure and associated Kelvin measurement method for determining front contact resistance (circuit loading resistance) of a metal/semiconductor ohmic contact is described. The values of front contact resistance for aluminum/silicon contacts are determined using this Kelvin‐cross contact resistance test structure and are compared with values determined by a two‐terminal contact chain method and with values determined by a Kelvin voltage divider method. The values of front contact resistance using the Kelvin‐cross structure and associated measurement method are shown to be less sensitive to photolithographic process variations and electrical measurement errors than those determined using the other two structures and measurement methods.
TI - An Improved Test Structure and Kelvin‐Measurement Method for the Determination of Integrated Circuit Front Contact Resistance
JF - Journal of the Electrochemical Society
DO - 10.1149/1.2113861
DA - 1985-02-01
UR - https://www.deepdyve.com/lp/iop-publishing/an-improved-test-structure-and-kelvin-measurement-method-for-the-KN1sM59HeD
SP - 440
EP - 443
VL - 132
IS - 2
DP - DeepDyve
ER -