TY - JOUR
AU1 - Osadchuk, V.
AU2 - Sergienko, A.
AU3 - Revenok, V.
AU4 - Gerasimchuk, V.
AU5 - Sukhobrus, I.
AB - APPARATUS FOR STUDYING RELAXATION PROCESSES IN A LOW-TEMPERATURE PLASMA BY THE PHOTON COUNTING METHOD V. S. Osadchuk, A. F. Sergienko,* UDC 53~08:533.9.089.5 V. I. Revenok, V. A. Gerasimchuk, and I. I. Sukhobrus Progress in integrated optics and superlarge integrated circuits has made the problem of realizing submicron figures and thin films with fixed characteristics especially impor- tant. This problem cannot be solved without the application of technologies based on the use of low-tempera~ure gas-discharge plasma [1]. One factor limiting the application of these technologies is the lack of universal, simple, and reliable methods for monitoring production that would permit efficient control of the plasma etching and film deposition processes. In what follows we shall employ a method based on measuring the relaxation time of active particles to study and monitor etching processes in a plasma. For this we developed a fast, high-current apparatus, which can operate autonomously as well as as a primary informa- tion transducer in systems for monitoring and diagnostics of plasma. In the apparatus the relaxation time is determined by the method of counting photons in transient processes in the plasma (ignition and extinction of the discharge). The measurement of a transient process, as described in 
TI - Apparatus for studying relaxation processes in a low-temperature plasma by the photon counting method
JF - Measurement Techniques
DO - 10.1007/BF00863636
DA - 2004-12-06
UR - https://www.deepdyve.com/lp/springer-journals/apparatus-for-studying-relaxation-processes-in-a-low-temperature-KBGS4JSthn
SP - 39
EP - 41
VL - 32
IS - 1
DP - DeepDyve
ER -