TY - JOUR
AB - An overview of semiconductor device modelling is presented which describes the principal methods of representing and analysing modern solid-state devices. The review deals with classical, semiclassical, particle and quantum transport methodologies and compares the relative merits of each approach. The background behind each modelling technique is briefly summarised and recent developments in each area are described. The importance of accounting for non-stationary and quantum effects in small geometry devices is emphasised.
TI - Semiconductor device modelling
JF - Reports on Progress in Physics
DO - 10.1088/0034-4885/48/2/002
DA - 1985-02-01
UR - https://www.deepdyve.com/lp/iop-publishing/semiconductor-device-modelling-Jw5qw2UbSi
SP - 223
VL - 48
IS - 2
DP - DeepDyve
ER -