TY - JOUR
AU1 - Wu, Xing
AU2 - Uchikoshi, Junichi
AU3 - Hirokane, Takaaki
AU4 - Yamada, Ryuta
AU5 - Takeuchi, Akihiro
AU6 - Arima, Kenta
AU7 - Morita, Mizuho
AB - Patterned oxides buried in bonded silicon-on-insulator (SOI) wafers before thinning have been characterized by near-IR scattering topography and a microscopy combination system. Micron-scaled pinholes in patterned oxides buried in bonded SOI wafers have been observed by the scattering topography. Edges of the patterned oxides have also been observed by both scattering topography and transmission microscopy. With the combination of scattering topography and transmission and reflection microscopy, this system is effective to evaluate the visibility of patterned oxides buried in bonded SOI wafers.
TI - Characterization of Pinhole in Patterned Oxide Buried  in Bonded Silicon-on-Insulator Wafers by Near-Infrared  Scattering Topography and Transmission Microscopy
JF - Journal of The Electrochemical Society
DO - 10.1149/1.2971178
DA - 2008-09-09
UR - https://www.deepdyve.com/lp/iop-publishing/characterization-of-pinhole-in-patterned-oxide-buried-in-bonded-JkAxRD0AM0
SP - H864
EP - H868
VL - 155
IS - 11
DP - DeepDyve
ER -