TY - JOUR
AU - Liao, Zhi‐Min
AB - Control of graphene memory devices using photons, via control of the charge‐transfer process, is demonstrated by employing gate‐voltage pulses to program/erase the memory elements. The hysteresis in the conductance‐gate voltage‐dependence of graphene field‐effect transistors on a SiO2 substrate can be greatly enlarged by ultraviolet irradiation in both air and vacuum. An enhanced charge transfer between graphene and its surroundings, induced by ultraviolet illumination, is proposed.
TI - Ultraviolet Irradiation‐Controlled Memory Effect in Graphene Field‐Effect Transistors
JF - Small
DO - 10.1002/smll.201202947
DA - 2013-07-08
UR - https://www.deepdyve.com/lp/wiley/ultraviolet-irradiation-controlled-memory-effect-in-graphene-field-IC2rf7sGw3
SP - 2240
EP - 2244
VL - 9
IS - 13
DP - DeepDyve
ER -